class A RF power amplifier

50V 5V + - + - + D S G G C L R -
constants:c


Parameters

frequency
f \(Hz\)
Output Power
Po \(W\)
Band width
BW \(Hz\)
PS Voltage
`V_I` \(V\)
Min DS voltage
`V_{DSmin}` \(V\)
Resonant efficiency
`\eta_r` \(\)

Output

output voltage `V_m`

`V_m=V_I-V_{DSmin}`

Quality factor `Q_L`

`Q_L=f/{BW}`

drain efficiency `eta_D`

`eta_D=1/2-V_{DSmin}/{2V_I}`

Total efficiency `eta`

`eta=eta_D eta_r`

dc supply power `P_I`

`P_I eta=P_o`

drain ac power `P_{DS}`

`P_{DS}=P_I eta_D`

power loss in the transistor `P_D`

`P_D=P_I-P_{DS}`

maximum DS voltage `V_{DSmax}`

`V_{DSmax}=V_I+V_m`

Load resistance R

`P_O=V_m^2/{2R}`

resonant inductance L

`Q_L=R/{omega_0 L}`

resonant capacitance C

`Q_L=1/(omega_0 C)//R`

choke inductance `L_f`

`X_{Lf}=omega_0 L_f=10R`

coupling capacitor `C_c`

`X_{Cc}=R/10=1/(omega_0 C_c)`

load current `I_m`

`I_m=I_D=V_m/R`

max drain current `I_{DM}`

`I_{DM}=I_D+I_m`